PART |
Description |
Maker |
RMLV0408E-16 |
4Mb Advanced LPSRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
RMLV0414E-15 |
4Mb Advanced LPSRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
R1LV0808ASB-7SI R1LV0808ASB-5SI |
8Mb Advanced LPSRAM (1024k word x 8bit)
|
Renesas Electronics Corporation
|
R1LV1616R_07 R1LV1616R R1LV1616RBG-5SI R1LV1616RBG |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) 16Mb的先进LPSRAM00万wordx16bit / 200wordx8bit
|
RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation. Renesas Electronics, Corp.
|
R1WV6416RSD-5SI R1WV6416RSD-5SR R1WV6416RSD-7SI R1 |
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
|
http:// Renesas Electronics Corporation
|
KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;(不推荐用于新设计)
|
Ecliptek, Corp.
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
M27C320 6185 M27C320-80N1 M27C320-100M1 M27C320-10 |
From old datasheet system 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32兆位4Mb的x8或检察官办公室的2Mb x16存储
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
M27W064-110N1T M27W064 M27W064-100M1T M27W064-100N |
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory 64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM MEMORY 64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM?MEMORY 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory 64 Mbit 4Mb x16 3V Supply FlexibleROM⑩ Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|